Single-event transient effects on dynamic comparator in 28nm FDSOI CMOS technology - Télécom Paris Access content directly
Journal Articles Microelectronics Reliability Year : 2018
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hal-02287982 , version 1 (13-09-2019)

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  • HAL Id : hal-02287982 , version 1

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Nilson Maciel, Elaine Crespo Marques, Lirida Naviner, Hao Cai. Single-event transient effects on dynamic comparator in 28nm FDSOI CMOS technology. Microelectronics Reliability, 2018, 88-90, pp.965-968. ⟨hal-02287982⟩
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