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Communication Dans Un Congrès Année : 2010

High Density Asynchronous LUT Based on Non-volatile MRAM Technology

Résumé

In this article, we present the architecture design of high-performance Asynchronous Look Up Table (LUT) embedded with a non-volatile Magnetic RAM (MRAM) as the configuration memory, called MALUT. It promises a number of advantages over the traditional FPGA circuits such as “free” standby power, high operating frequency and instant on/off etc. Thanks to the 3D integration and high density of MRAM, fine-grain run-time reconfiguration and multi-context configuration can be achieved. An automatic design flow has been developed for the design of complex hybrid CMOS/MRAM circuits. Based on CMOS 130nm and MRAM 120nm technology, mixed simulations and layout implementation have been done to demonstrate the expected operation and configuration performances. At last, we discuss and conclude.
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Dates et versions

hal-04516472 , version 1 (22-03-2024)

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Sumanta Chaudhuri, Weisheng Zhao, Jacques-Oliver Klein, Claude Chappert, Pascale Mazoyer. High Density Asynchronous LUT Based on Non-volatile MRAM Technology. 2010 International Conference on Field Programmable Logic and Applications (FPL), Aug 2010, Milan, Italy. pp.374-379, ⟨10.1109/FPL.2010.80⟩. ⟨hal-04516472⟩
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