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Article Dans Une Revue IEEE Photonics Technology Letters Année : 1994

Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement

Résumé

The measurement of spontaneous emission power above threshold has shown a nearly linear increase with biasing current in a 1.55-μm InGaAs/InGaAlAs multiple quantum-well laser. Based on this measurement, we propose a novel experimental method to determine the nonlinear gain coefficient. The obtained value is 1.2×10/sup -17/ cm 3 for the laser used. This value corresponds reasonably to that obtained by chirp-to-modulated-power ratio method, confirming the validity of this new measurement method
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Dates et versions

hal-04125101 , version 1 (11-06-2023)

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F. Girardin, G.-H. Duan, C. Chabran, Philippe Gallion, M. Blez, et al.. Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement. IEEE Photonics Technology Letters, 1994, 6 (8), pp.894-896. ⟨10.1109/68.313044⟩. ⟨hal-04125101⟩
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