OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI
Résumé
This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|
Loading...
