Design Considerations for Reliable OxRAM-based Non-Volatile Flip-Flops in 28nm FD-SOI Technology - Télécom Paris Access content directly
Conference Papers Year : 2016

Design Considerations for Reliable OxRAM-based Non-Volatile Flip-Flops in 28nm FD-SOI Technology

Abstract

This paper investigates the design architectures for reliable high-yield low operating voltage non-volatile flip-flops (NVFF) for zero-leakage and instantaneously-on ultra-low power applications in scaled CMOS technologies. A reliable thin-gate oxide NVFF, integrating OxRAM current-based storing and restoring solutions is designed and analyzed in 28nm FD-SOI. The proposed class of NVFF designs has been optimized for optimal OxRAM programming conditions that improve endurance and minimize programming power, while ensuring high yield. The OxRAM device silicon measurements show that a low programming current benefits endurance, but at the expense of a reduced memory window (ROFF/RON). Statistical analysis demonstrates that a low NVFF operating voltage in restore mode can be achieved with a narrow memory window by using the current-based restoring. In a representative design, compared to a standard FF, the non-volatility is added at the cost of less than 3% of performance and up to 3.5%-13% of active energy increase, with 108 cycles of endurance. Then compared with the data-retention FF supplied at 0.5V, NVFF reduces the sleep power consumption for standby modes longer than 0.34s for uniform Q switching (0.17s-0.6s) Finally, the low variability of the FD-SOI technology enables 3 sigma yield restore down to 0.7V.
Fichier principal
Vignette du fichier
07527448.pdf (361.87 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-02287862 , version 1 (09-01-2020)

Licence

Attribution

Identifiers

Cite

Natalija Jovanovic, Olivier Thomas, Elisa Vianello, Boris Nikolic, Lirida A. B. Naviner. Design Considerations for Reliable OxRAM-based Non-Volatile Flip-Flops in 28nm FD-SOI Technology. IEEE International Symposium on Circuits and Systems (ISCAS 2016), May 2016, Montréal, Canada. pp.1146-1149, ⟨10.1109/ISCAS.2016.7527448⟩. ⟨hal-02287862⟩
43 View
155 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More