Majority voters are typically used in redundancy hardening techniques aiming to increase the reliability of nanoscale circuits. Besides, Spin Transfer Torque Magnetic Tunnel Junction (STT-MJT) has been identified as the most promising candidate for low power and high speed applications. In this paper, we present two majority voter circuits based on nanometer STT-MTJ. By using STMicroelectronics FDSOI 28 nm process and a precise STT-MTJ compact model, electrical simulations have been carried out to compare their performances and analyze their reliability. Both radiation sensitivity and variability have been investigated in the reliability-aware analysis.