Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects - Télécom Paris
Article Dans Une Revue Journal of Low Power Electronics Applications Année : 2019

Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects

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hal-02288058 , version 1 (13-09-2019)

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Nilson Maciel, Elaine Crespo Marques, Lirida Naviner, Hao Cai, Jun Yang. Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects. Journal of Low Power Electronics Applications, 2019, 9 (2), pp.1-14. ⟨10.3390/jlpea9020015⟩. ⟨hal-02288058⟩
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